Publikációk

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Az aláhúzott szerzők az intézet dolgozói. A DOI-linkek eléréséhez előfizetésre lehet szüksége!

2016

Articles

1. Beke D, Jánosi TZ, Somogyi B, Major DÁ, Szekrényes Zs, Erostyák J, Kamarás K, Gali A: Identification of luminescence centers in molecular-sized silicon carbide nanocrystals. J PHYS CHEM C 120:(1) 685-691 (2016) DOI
2. Csóré A, Gällström A, Janzén E, Gali A: Investigation of Mo defects in 4H-SiC by means of density functional theory. MATER SCI FORUM 858: 261-264 (2016) DOI
3. Gali A, Demján T, Vörös M, Thiering G, Cannuccia E, Marini A: Electron-vibration coupling induced renormalization in the photoemission spectrum of diamondoids. NAT COMMUN 7: 11327/1-9 (2016) DOI
4. Gruznev DV, Bondarenko LV, Matetskiy AV, Mihalyuk AN, Tupchaya AY, Utas OA, Eremeev SV, Hsing C-R, Chou J-P, Wei C-M, Zotov AV, Saranin AA: Synthesis of two-dimensional Tlx Bi1-x compounds and Archimedean encoding of their atomic structure. SCI REP-UK 6: 19446/1-9 (2016) DOI
5. Ivády V, Szász K, Falk AL, Klimov PV, Janzén E, Abrikosov IA, Awschalom DD, Gali A: First principles identification of divacancy related photoluminescence lines in 4H and 6H-SiC. MATER SCI FORUM 858: 322-325 (2016) DOI
6. Ivády V, Klimov PV, Miao KC, Falk AL, Christle DJ, Szász K, Abrikosov IA, Awschalom DD, Gali A: High-fidelity bidirectional nuclear qubit initialization in SiC. PHYS REV LETT 117:(22) 220503/1-6 (2016) DOI
7. Ivády V, Szász K, Falk AL, Klimov PV, Christle DJ, Koehl WF, Janzén E, Abrikosov IA, Awschalom DD, Gali A: Optical nuclear spin polarization of divacancies in SiC. MATER SCI FORUM 858: 287-290 (2016) DOI
8. Jarmola A, Bodrog Z, Kehayias P, Markham M, Hall J, Twitchen DJ, Acosta VM, Gali A, Budker D: Optically detected magnetic resonances of nitrogen-vacancy ensembles in 13C-enriched diamond. PHYS REV B 94:(9) 094108/1-5 (2016) DOI
9. Lohrmann A, Johnson BC, Almutairi AFM, Lau DWM, Negri M, Bosi M, Gibson BC, McCallum JC, Gali A, Ohshima T, Castelletto S: Engineering single defects in silicon carbide bulk, nanostructures and devices. MATER SCI FORUM 858: 312-317 (2016) Proc. Conf. Silicon Carbide and Related Materials 2015. DOI
10. Norambuena A, Reyes SA, Mejía-Lopéz J, Gali A, Maze JR: Microscopic modeling of the effect of phonons on the optical properties of solid-state emitters. PHYS REV B 94:(13) 134305/1-8 (2016) DOI
11. Thiering G, Gali A: Characterization of oxygen defects in diamond by means of density functional theory calculations. PHYS REVB 94:(12) 125202/1-15 (2016) DOI
12. von Bardeleben H J, Cantin J L, Csóré A, Gali A, Rauls E, Gerstmann U: NV centers in 3C,4H, and 6H silicon carbide: A variable platform for solid-state qubits and nanosensors.PHYS REV B 94:(12) 121202/1-6 (2016) DOI

See also: 1. Dravecz G. et al.