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OPTICAL AND ELECTRICAL PROPERTIES OF ELECTRODEPOSITED CdSe THIN FILMS AS A FUNCTION OF MICROSTRUCTURE
D. Karoussos, T. Kosanovic and M. Bouroushian
General Chemistry Laboratory, School of Chemical Engineering, National Technical University of Athens
9, Heroon Polytechniou str., Zografos Campus, 157 73 Athens, Greece
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Variant microstructures of CdSe films (2-3 µm in thickness) were formed by electrodeposition from acidic aqueous
solutions under mass transfer control, either by varying the available free energy for the electrosynthetic reaction –
through the electrochemical potential control – or by modifying the nucleation and growth conditions through changes in
the chemical and physical nature of the deposition substrate. To this purpose, commercial grade Ni and Ti discs were
subjected to various pretreatments - in particular chemical etching, anodizing (Ti to TiOx) and buffer layer formation
on the metal surface - and used as deposition electrodes under similar electrochemical conditions. The CdSe barrier
layers formed on these substrates accommodated different microstructures in terms of crystallite size and microchemical
composition. Thermal treatment was applied in certain cases in order to adjust stoichiometry.
The morphology of the samples was examined by scanning electron microscopy, while voltammetric, chronoamperometric and
current spectroscopy measurements were performed in a proper (photo)electrochemical (PEC) assembly in order to determine
their optical and electrical properties. A plain relation between the CdSe film morphology and PEC behavior was established,
indicating that the distribution and size of the crystallites cause measurable shifts in the band gap width of the CdSe
semiconductor, while determining the photocurrent stability and the resistance to photocorrosion. A particular charge
transfer mechanism associated with the existence of a nanostructure was shown to result in higher photoconversion
efficiencies than those obtained from larger-grained films.
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