Publikációk

Teljesebb és frissebb publikációs listáért keresse fel a Magyar Tudományos Művek Tárát

Az aláhúzott szerzők az intézet dolgozói. A DOI-linkek eléréséhez előfizetésre lehet szüksége!

2019

Articles

1. Csóré A, Magnusson B, Son NT, Gällström A, Ohshima T, Ivanov IG, Gali Á: First-principles study on photoluminescence quenching of divacancy in 4H SIC. MATER SCI FORUM 963: 714-717 (2019) DOI
2. Davidsson J, Ivády V, Armiento R, Ohshima T, Son NT, Gali Á, Abrikosov IA: Identification of divacancy and silicon vacancy qubits in 6H-SiC. APPL PHYS LETT 114:11 112107 pp. 1-5 (2019) DOI
3. Gali Á: Ab initio theory of the nitrogen-vacancy center in diamond. NANOPHOTONICS 8:11 1907-1943 (2019) DOI
4. Ivády V, Davidsson J, Delegan N, Falk AL, Klimov PV, Whiteley SJ, Hruszkewycz SO, Holt MV, Heremans FJ, Son NT, Awschalom DD, Abrikosov IA, Gali Á: Stabilization of point-defect spin qubits by quantum wells. NAT COMMUN 10: 5607 pp. 1-8 (2019) DOI
5. Johnson BC, Woerle J, Haasmann D, Lew CT-K, Parker RA, Knowles H, Pingault B, Atature M, Gali Á, Dimitrijev S, Camarda M, J.C. McCallum JC: Optically active defects at the SiC/SiO2 interface. PHYS REV APPL 12:4 044024 pp. 1-7 (2019) DOI
6. Li S, Chou J-P, Wei J, Sun M, Hu A, Gali Á: Oxygenated (113) diamond surface for nitrogen-vacancy quantum sensors with preferential alignment and long coherence time from first principles. CARBON 145: 273-280 (2019) DOI
7. Miao KC, Bourassa A, Anderson CP, Whiteley SJ, Crook AL, Bayliss SL, Wolfowicz G, Thiering G, Udvarhelyi P, Ivády V, Abe H, Ohshima T, Gali Á, Awschalom DD: Electrically driven optical interferometry with spins in silicon carbide. SCI ADV 5:11 eaay0527 pp. 1-7 (2019) DOI
8. Nagy R, Niethammer M, Widmann M, Chen YC, Udvarhelyi P, Bonato C, Hassan JU, Karhu R, Ivanov IG, Son NT, Maze JR, Ohshima T, Soykal ÖO, Gali Á, Lee S-Y, Kaiser F, Wrachtrup J: High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. NAT COMMUN 10:1 1954 pp. 1-8 (2019) DOI
9. Spindlberger L, Csóré A, Thiering G, Putz S, Karhu R, Ul Hassan J, Son NT, Fromherz T, Gali Á, Trupke M: Optical properties of vanadium in 4H silicon carbide for quantum technology. PHYS REV APPL 12:1 014015 pp. 1-11 (2019) DOI
10. Stacey A, Dontschuk N, Chou J-P, Broadway DA, Schenk AK, Sear MJ, Tetienne J-P, Hoffman A, Prawer S, Pakes CI, Tadich A, de Leon NP, Gali Á, Hollenberg LCL: Evidence for primal sp2 defects at the diamond surface: candidates for electron trapping and noise sources. ADV MATER INTERFACES 6:3 1801449 pp. 1-22 (2019) DOI
11. Sugimoto H, Somogyi B, Nakamura T, Zhou H, Ichihashi Y, Nishiyama S, Gali Á, Fujii M: Size-dependent photocatalytic activity of cubic boron phosphide nanocrystals in the quantum confinement regime. J PHYS CHEM C 123:37 23226-23235 pp. 1-10 (2019) DOI
12. Thiering G, Gali Á: The (eg ⊗ eu ) ⊗ Eg product Jahn–Teller effect in the neutral group-IV vacancy quantum bits in diamond. NPJ COMPUT MATER 5:1 18 pp. 1-6 (2019) DOI
13. Udvarhelyi P, Nagy R, Kaiser F, Lee SY, Wrachtrup J, Gali Á: Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface. PHYS REV APPL 11:4 044022 pp. 1-8 (2019) DOI
14. Widmann M, Niethammer M, Fedyanin DY, Khramtsov IA, Rendler T, Booker ID, Ul Hassan J, Morioka N, Chen Y-C, Ivanov IG, Son NT, Ohshima T, Bockstedte M, Gali Á, Bonato C, Lee S-Y, Wrachtrup J: Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device. NANO LETT 19:10 7173-7180 (2019) DOI

2018

Articles

1. Abdi M, Chou JP, Gali Á, Plenio MB: Color centers in hexagonal boron nitride monolayers: A group theory and ab initio analysis. ACS PHOTONICS 5:5 1967-1976 (2018) DOI
2. Beke D, Fučíková A, Jánosi TZ, Károlyházy Gy, Somogyi B, Lenk S, Krafcsik O, Czigány Z, Erostyák J, Kamarás K, Valenta J, Gali Á: Direct observation of transition from solid-state to molecular-like optical properties in ultrasmall silicon carbide nanoparticles. J PHYS CHEM C 122:46 26713-26721 (2018) DOI
3. Bockstedte M, Schutz F, Garratt T, Ivády V, Gali Á: Ab initio description of highly correlated states in defects for realizing quantum bits. NPJ QUANTUM MATER 3: 31/1-6 (2018) DOI
4. Chou JP, Bodrog Z, Gali Á: First-principles study of charge diffusion between proximate solid-state qubits and its implications on sensor applications. PHYS REV LETT 120:13 136401/1-5 (2018) DOI
5. Davidsson J, Ivády V, Armiento R, Son NT, Gali Á, Abrikosov IA: First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H-SiC. NEW J PHYS 20: 023035/1-14 (2018) DOI
6. Ivády V, Davidsson J, Son NT, Ohshima T, Abrikosov IA, Gali Á: Ab initio theory of Si-vacancy quantum bits in 4H and 6H-SiC. MATER SCI FORUM 924: 895-900 (2018) DOI
7. Ivády V, Abrikosov IA, Gali Á: First principles calculation of spin-related quantities for point defect qubit research. NPJ COMPUT MATER 4:1 76/1-13 (2018) DOI
8. Lindner S, Bommer A, Muzha A, Krueger A, Gines L, Mandal S, Williams O, Londero E, Gali Á, Becher C: Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds. NEW J PHYS 20:11 115002/1-14 (2018) DOI
9. Londero E, Thiering G, Razinkovas L, Gali Á, Alkauskas A: Vibrational modes of negatively charged silicon-vacancy centers in diamond from ab initio calculations. PHYS REV B 98:3 035306/1-9 (2018) DOI
10. Londero E, Bourgeois E, Nesladek M, Gali Á: Identification of nickel-vacancy defects by combining experimental and ab initio simulated photocurrent spectra. PHYS REV B 97:24 241202/1-6 (2018) DOI
11. Magnusson B, Nguyen TS, Csóré A, Gallstrom A, Ohshima T, Gali Á, Ivanov IG: Excitation properties of the divacancy in 4H-SiC. PHYS REV B 98:19 195202/1-15 (2018) DOI
12. Mihalyuk AN, Bondarenko LV, Tupchaya AY, Gruznev DV, Chou J-P, Hsing C-R, Wei C-M, Zotov AV, Saranin AA: Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties. SURF SCI 668: 17-22 (2018) DOI
13. Rose BC, Thiering G, Tyryshkin AM, Edmonds AM, Markham ML, Gali Á, Lyon SA, De Leon NP: Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond. PHYS REV B 98:23 235140/1-11 (2018) DOI
14. Somogyi B, Bruyer E, Gali Á: Photoluminescence, infrared, and Raman spectra of co-doped Si nanoparticles from first principles. J CHEM PHYS 149:15 154702/1-12 (2018) DOI
15. Tang W, Sun M, Yu J, Chou J-P: Magnetism in non-metal atoms adsorbed graphene-like gallium nitride monolayers. APPL SURF SCI 427: 609-612 (2018) DOI
16. Thiering G, Gali Á: Theory of the optical spin-polarization loop of the nitrogen-vacancy center in diamond. PHYS REV B 98:8 085207/1-12 (2018) DOI
17. Thiering G, Gali Á: Ab initio magneto-optical spectrum of group-IV vacancy color centers in diamond. PHYS REV X 8:2 021063/1-17 (2018) DOI
18. Udvarhelyi P, Gali Á: Ab initio spin-strain coupling parameters of divacancy qubits in silicon carbide. PHYS REV APP 10:5 054010/1-6 (2018) DOI
19. Udvarhelyi P, Shkolnikov VO, Gali Á, Burkard G, Palyi A: Spin-strain interaction in nitrogen-vacancy centers in diamond. PHYS REV B 98:7 075201/1-13 (2018) DOI
20. Ulbricht R, Dong S, Gali Á, Meng S, Loh Z-H: Vibrational relaxation dynamics of the nitrogen-vacancy center in diamond. PHYS REV B 97:22 220302/1-6 (2018) DOI
21. Valenta J, Fujii M, Gali Á, Nesladek M: Silicon, germanium, diamond and carbon nanostructures and their nanocomposites with other materials. PHYS STATUS SOLIDI B 255:10 1870135/1-1 (2018) DOI
22. Zhou Y, Wang Z, Rasmita A, Kim S, Berhane A, Bodrog Z, Adamo G, Gali Á, Aharonovich I, Gao W-B: Room temperature solid-state quantum emitters in the telecom range. SCI ADV 4:3 eaar3580/1-6 (2018) DOI
23. Zhuang Y, Chou J-P, Chen HYT, Hsu YY, Hu CW, Hu A, Chen TY: Atomic scale Pt decoration promises oxygen reduction properties of Co@Pd nanocatalysts in alkaline electrolytes for 310k redox cycles. SUSTAIN ENERG FUELS 2:5 946-957 (2018) DOI
See also: Lee J-Y et al. SURF SCI 674: 51-68 (2018) DOI
Dravecz G et al. PHYS CHEM CHEM PHYS 20:19 13419-13429 (2018) DOI

2017

Articles

1. Beke D, Károlyházy G, Czigány Z, Bortel G, Kamarás K, Gali Á: Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures. SCI REP-UK 7:(1) 10599/1-6 (2017)
2. Beke D, Horváth K, Kamarás K, Gali Á: Surface-mediated energy transfer and subsequent photocatalytic behavior in silicon carbide colloid solutions. LANGMUIR 33:(50) 14263-14268 (2017)
3. Berhane AM, Jeong KY, Bodrog Z, Fiedler S, Schroder T, Trivino NV, Palacios T, Gali A, Toth M, Englund D, Aharonovich I: Bright room-temperature single-photon emission from defects in gallium nitride. ADV MATER 29:(12) 1605092/1-8 (2017)
4. Bourgeois E, Londero E, Buczak K, Hruby J, Gulka M, Balasubramaniam Y, Wachter G, Stursa J, Dobes K, Aumayr F, Trupke M, Gali A, Nesladek M: Enhanced photoelectric detection of NV magnetic resonances in diamond under dual-beam excitation. PHYS REV B 95:(4) 041402/1-5 (2017)
5. Chen HYT, Chou JP, Lin CY, Hu CW, Yang YT, Chen TY: Heterogeneous Cu-Pd binary interface boosts stability and mass activity of atomic Pt clusters in the oxygen reduction reaction. NANOSCALE 9:(21) 7207-7216 (2017)
6. Chou J-P, Retzker A, Gali A: Nitrogen terminated diamond (111) surface for room temperature quantum sensing and simulation. NANO LETT 17:(4) 2294-2298 (2017)
7. Chou JP, Gali A: Nitrogen-vacancy diamond sensor: novel diamond surfaces from ab initio simulations. MRS COMMUN 7:(3) 551-562 (2017)
8. Christle DJ, Klimov PV, Casas CFDL, Szász K, Ivády V, Jokubavicius V, Hassan JU, Syvajarvi M, Koehl WF, Ohshima T, Son NT, Janzen E, Gali Á, Awschalom DD: Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface. PHYS REV X 7:(2) 021046/1-12 (2017)
9. Csóré A, von Bardeleben HJ, Cantin JL, Gali Á: Characterization and formation of NV centers in 3C, 4H, and 6H SiC: An ab initio study. PHYS REV B 96:(8) 085204/1-11 (2017)
10. Derian R, Tokár K, Somogyi B, Gali Á, Štich I: Optical gaps in pristine and heavily doped silicon nanocrystals: DFT versus quantum Monte Carlo benchmarks. J CHEM THEORY COMPUT 13:(12) 6061-6067 (2017)
11. Green BL, Breeze BG, Rees GJ, Hanna JV, Chou J-P, Ivády V, Gali A, Newton ME: All-optical hyperpolarization of electron and nuclear spins in diamond. PHYS REV B 96:(5) 054101/1-8 (2017)
12. Gruznev DV, Bondarenko LV, Tupchaya AY, Eremeev SV, Mihalyuk AN, Chou JP, Wei CM, Zotov AV, Saranin AA: 2D Tl-Pb compounds on Ge(1 1 1) surface: Atomic arrangement and electronic band structure. J PHYS-CONDENS MAT 29:(3) 035001/1-9 (2017)
13. Gulka M, Bourgeois E, Hruby J, Siyushev P, Wachter G, Aumayr F, Hemmer PR, Gali A, Jelezko F, Trupke M, Nesladek M: Pulsed photoelectric coherent manipulation and detection of N-V center spins in diamond. PHYS REV APPL 7:(4) 044032/1-7 (2017)
14. Häußler S, Thiering G, Dietrich A, Waasem N, Teraji T, Isoya J, Iwasaki T, Hatano M, Jelezko F, Gali A, Kubanek A: Photoluminescence excitation spectroscopy of SiV- and GeV- color center in diamond. NEW J PHYS 19:(6) 063036/1-9 (2017)
15. Ivády V, Gali A, Abrikosov IA: Hybrid-DFT+Vw method for band structure calculation of semiconducting transition metal compounds: the case of cerium dioxide. J PHYS-CONDENS MAT 29: 454002/1-8 (2017)
16. Ivády V, Davidsson J, Son NT, Ohshima T, Abrikosov IA, Gali Á: Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide. PHYS REV B 96:(16) 161114/1-5 (2017)
17. Pfender M, Aslam N, Simon P, Antonov D, Thiering G, Burk S, Favaro de Oliveira F, Denisenko A, Fedder H, Meijer J, Garrido JA, Gali A, Teraji T, Isoya J, Doherty MW, Alkauskas A, Gallo A, Gruneis A, Neumann P, Wrachtrup J: Protecting a diamond quantum memory by charge state control. NANO LETT 17:(10) 5931-5937 (2017)
18. Somogyi B, Derian R, Štich I, Gali A: High-throughput study of compositions and optical properties in heavily co-doped silicon nanoparticles. J PHYS CHEM C 121:(49) 27741-27750 (2017)
19. Sun M, Chou J-P, Ren Q, Zhao Y, Yu J, Tang W: Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN. APPL PHYS LETT 110:(17) 173105/1-4 (2017)
20. Sun M, Ren Q, Zhao Y, Chou J-P, Yu J, Tang W: Electronic and magnetic properties of 4d series transition metal substituted graphene: A first-principles study. CARBON 120: 265-273 (2017)
21. Sun M, Chou J-P, Yu J, Tang W: Effects of structural imperfection on the electronic properties of graphene/WSe2 heterostructures. J MATER CHEM C 5:(39) 10383-10390 (2017)
22. Sun M, Chou J-P, Zhao Y, Yu J, Tang W: Weak C-H⋯F-C hydrogen bonds make a big difference in graphane/fluorographane and fluorographene/fluorographane bilayers. PHYS CHEM CHEM PHYS 19:(41) 28127-28132 (2017)
23. Sun M, Chou J-P, Yu J, Tang W: Electronic properties of blue phosphorene/graphene and blue phosphorene/graphene-like gallium nitride heterostructures. PHYS CHEM CHEM PHYS 19:(26) 17324-17330 (2017)
24. Thiering G, Gali A: Ab initio calculation of spin-orbit coupling for an NV center in diamond exhibiting dynamic Jahn-Teller effect. PHYS REV B 96:(8) 081115/1-6 (2017)
25. Udvarhelyi P, Thiering G, Londero E, Gali A: Ab initio theory of the N2V defect in diamond for quantum memory implementation. PHYS REV B 96:(15) 155211/1-7 (2017)
26. Gali Á: Kvantumtechnológiai rendszerek: szimuláció és kísérleti megvalósítás (Quantum technological systems: simulation and experimental realization, in Hungarian). FIZIKAI SZEMLE 67:(5) 157-162 (2017)
27. Csóré A, Gali Á: Density functional theory on NV center in 4H SiC. MATER SCI FORUM 897: 269-274 (2017) (ECSCRM 2016 - 11th European Conference on Silicon Carbide and Related Materials, Chalkidiki, Greece, 25-29 September 2016)

Conference proceedings

28. Rose BC, Huang D, Tyryshkin AM, Sangtawesin S, Srinivasan S, Twitchen DJ, Markham ML, Edmonds AM, Gali A, Stacey A, Wang W, Johansson UDH, Zaitsev A, Lyon SA, de Leon NP: New color centers in diamond for long distance quantum communication. In: Proc. CLEO: Science and Innovations, Conference on Lasers and Electro-Optics (San Jose (CA), USA, 14-19 May 2017) OSA Publishing, Washington, Paper SM1K.1
29. Rose BC, Huang D, Tyryshkin AM, Sangtawesin S, Twitchen DJ, Markham ML, Edmonds AM, Gali A, Stacey A, Wang W, Johansson UD, Zaitsev A, Lyon SA, de Leon NP: The neutral silicon split-vacancy defect in diamond, a promising color center for quantum communication. In: Proc. CLEO: Science and Innovations, Conference on Lasers and Electro-Optics (San Jose (CA), USA, 14-19 May 2017) OSA Publishing, Washington, Paper FTu1E.3

2016

Articles

1. Beke D, Jánosi TZ, Somogyi B, Major DÁ, Szekrényes Zs, Erostyák J, Kamarás K, Gali A: Identification of luminescence centers in molecular-sized silicon carbide nanocrystals. J PHYS CHEM C 120:(1) 685-691 (2016) DOI
2. Csóré A, Gällström A, Janzén E, Gali A: Investigation of Mo defects in 4H-SiC by means of density functional theory. MATER SCI FORUM 858: 261-264 (2016) DOI
3. Gali A, Demján T, Vörös M, Thiering G, Cannuccia E, Marini A: Electron-vibration coupling induced renormalization in the photoemission spectrum of diamondoids. NAT COMMUN 7: 11327/1-9 (2016) DOI
4. Gruznev DV, Bondarenko LV, Matetskiy AV, Mihalyuk AN, Tupchaya AY, Utas OA, Eremeev SV, Hsing C-R, Chou J-P, Wei C-M, Zotov AV, Saranin AA: Synthesis of two-dimensional Tlx Bi1-x compounds and Archimedean encoding of their atomic structure. SCI REP-UK 6: 19446/1-9 (2016) DOI
5. Ivády V, Szász K, Falk AL, Klimov PV, Janzén E, Abrikosov IA, Awschalom DD, Gali A: First principles identification of divacancy related photoluminescence lines in 4H and 6H-SiC. MATER SCI FORUM 858: 322-325 (2016) DOI
6. Ivády V, Klimov PV, Miao KC, Falk AL, Christle DJ, Szász K, Abrikosov IA, Awschalom DD, Gali A: High-fidelity bidirectional nuclear qubit initialization in SiC. PHYS REV LETT 117:(22) 220503/1-6 (2016) DOI
7. Ivády V, Szász K, Falk AL, Klimov PV, Christle DJ, Koehl WF, Janzén E, Abrikosov IA, Awschalom DD, Gali A: Optical nuclear spin polarization of divacancies in SiC. MATER SCI FORUM 858: 287-290 (2016) DOI
8. Jarmola A, Bodrog Z, Kehayias P, Markham M, Hall J, Twitchen DJ, Acosta VM, Gali A, Budker D: Optically detected magnetic resonances of nitrogen-vacancy ensembles in 13C-enriched diamond. PHYS REV B 94:(9) 094108/1-5 (2016) DOI
9. Lohrmann A, Johnson BC, Almutairi AFM, Lau DWM, Negri M, Bosi M, Gibson BC, McCallum JC, Gali A, Ohshima T, Castelletto S: Engineering single defects in silicon carbide bulk, nanostructures and devices. MATER SCI FORUM 858: 312-317 (2016) Proc. Conf. Silicon Carbide and Related Materials 2015. DOI
10. Norambuena A, Reyes SA, Mejía-Lopéz J, Gali A, Maze JR: Microscopic modeling of the effect of phonons on the optical properties of solid-state emitters. PHYS REV B 94:(13) 134305/1-8 (2016) DOI
11. Thiering G, Gali A: Characterization of oxygen defects in diamond by means of density functional theory calculations. PHYS REVB 94:(12) 125202/1-15 (2016) DOI
12. von Bardeleben H J, Cantin J L, Csóré A, Gali A, Rauls E, Gerstmann U: NV centers in 3C,4H, and 6H silicon carbide: A variable platform for solid-state qubits and nanosensors.PHYS REV B 94:(12) 121202/1-6 (2016) DOI

See also: 1. Dravecz G. et al.