This work presents an analytic angular differential cross section formula for the electromagnetic radiation field-assisted electron scattering on impurities in semiconductors. These impurities are approximated with various model potentials. The scattered electrons are described with the well-known Volkov wave function, which has been used to describe strong laser field matter interaction for more than half a century, which exactly describes the interaction of the electron with the external oscillating field. These calculations show that the electron conductance in a semiconductor could be enhanced by an order of magnitude if an infrared electromagnetic field is present with 10^11 W/cm^2 < I <10^13 W/cm2^ intensity.

Reference:
Imre Ferenc Barna, Mihály András Pocsai, and Sándor Varró, Eur. Phys. J. Appl. Phys. 84, 20101 (2018)